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M16C/30P Group 5. Electrical Characteristics

Rev.1.22 Mar 30, 2007 Page 26 of 53

REJ03B0088-0122

NOTES:

1. Referenced to V

CC1=4.5 to 5.5V, 3.0 to 3.6V at Topr = 0 to 60 °C (U3, U5) unless otherwise specified.

2. Program and Erase Endurance refers to the number of times a block erase can be performed.

If the program and erase endurance is 100, each block can be erased 100 times.

For example, if a 4 Kbytes block A is erased after writing 1 word data 2,048 times, each to a different address, this counts as

one program and erase endurance. Data cannot be written to the same address more than once without erasing the block.

(Rewrite prohibited)

3. Maximum number of E/W cycles for which operation is guaranteed.

4. Topr = -40 to 85 °C (U3) / -20 to 85 °C (U5).

Table 5.4 Flash Memory Version Electrical Characteristics

(1)

Symbol Parameter

Standard

Unit

Min. Typ. Max.

− Program and Erase Endurance

(2)

100

(3)

cycle

− Word Program Time (V

CC1=5.0V) 25 200 μs

− Lock Bit Program Time 25 200 μs

− Block Erase Time

CC1=5.0V)

4-Kbyte block 0.3 4 s

− 8-Kbyte block 0.3 4 s

− 32-Kbyte block 0.5 4 s

− 64-Kbyte block 0.8 4 s

PS Flash Memory Circuit Stabilization Wait Time 15 μs

− Data Hold Time

(4)

10 year

Table 5.5 Flash Memory Version Program / Erase Voltage and Read Operation Voltage

Characteristics

Flash Program, Erase Voltage Flash Read Operation Voltage

VCC1 = 3.3 ± 0.3 V or 5.0 ± 0.5 (Topr = 0°C to 60°C ) VCC1=2.7 to 5.5 V (Topr = -40°C to 85°C (U3)

-20°C to 85°C (U5))

1 2 ... 23 24 25 26 27 28 29 30 31 32 33 ... 58 59

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