Renesas R8C/15 Información técnica Pagina 233

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R8C/14 Group, R8C/15 Group 19. Electrical Characteristics
Rev.2.10 Jan 19, 2006 Page 219 of 253
REJ09B0164-0210
NOTES:
1. V
CC = AVcc = 2.7 to 5.5V at Topr = 0 to 60 °C, unless otherwise specified.
2. Definition of program and erase
The program and erase endurance shows an erase endurance for every block.
If the program and erase endurance is “n” times (n = 100, 10000), “n” times erase can be performed for every block.
For example, if performing 1-byte write to the distinct addresses on Block A of 1Kbyte block 1,024 times and then erasing that
block, program and erase endurance is counted as one time.
However, do not perform multiple programs to the same address for one time ease.(disable overwriting).
3. Endurace to guarantee all electrical characteristics after program and erase.(1 to “Min.” value can be guaranateed).
4. In the case of a system to execute multiple programs, perform one erase after programming as reducing effective reprogram
endurance not to leave blank area as possible such as programming write addresses in turn . If programming a set of 16
bytes, programming up to 128 sets and then erasing them one time can reduce effective reprogram endurance. Additionally,
averaging erase endurance for Block A and B can reduce effective reprogram endurance more. To leave erase endurance for
every block as information and determine the restricted endurance are recommended.
5. If error occurs during block erase, attempt to execute the clear status register command, then the block erase command at
least three times until the erase error does not occur.
6. Customers desiring Program/Erase failure rate information should contact their Renesas technical support representative.
7. The data hold time incudes time that the power supply is off or the clock is not supplied.
Table 19.4 Flash Memory (Program ROM) Electrical Characteristics
Symbol Parameter Conditions
Standard
Unit
Min. Typ. Max.
Program/Erase Endurance
(2)
R8C/14 Group
100
(3)
−−times
R8C/15 Group
1,000
(3)
−−times
Byte Program Time VCC = 5.0 V at Topr = 25 °C 50 400 µs
Block Erase Time VCC = 5.0 V at Topr = 25 °C 0.4 9 s
t
d(SR-ES) Time Delay from Suspend Request until
Erase Suspend
−−8ms
Erase Suspend Request Interval 10 −−ms
Program, Erase Voltage 2.7 5.5 V
Read Voltage 2.7 5.5 V
Program, Erase Temperature 0 60 °C
Data Hold Time
(7)
Ambient temperature = 55 °C20 −−year
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